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MIXA40WB1200TED
Converter - Brake - Inverter Module XPT IGBT
Single Phase Rectifier
Brake Chopper
Three Phase Inverter
www..com
VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 150 A IC25 IFSM = 28 A IC25 = 60 A = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V
Part name (Markingonproduct) MIXA40WB1200TED
21 D11 D13 D15
22
D7 T1 D1
18 17 6
T3
D3
20 19 5
T5
D5
NTC 8 4
7 1 2 3
16 15
D12
D14
D16
14
T7
11 10
T2
D2
12
T4
D4
13
D6 T6
9 E 72873
23
24
Pin configuration see outlines.
Features: *Easyparallelingduetothepositive temperaturecoefficientoftheon-state voltage *RuggedXPTdesign (Xtreme light Punch Through) results in: -shortcircuitratedfor10sec. -verylowgatecharge - square RBSOA @ 3x IC -lowEMI *Thinwafertechnologycombinedwith theXPTdesignresultsinacompetitive lowVCE(sat) *SONICTMdiode -fastandsoftreverserecovery -lowoperatingforwardvoltage
Application: *ACmotordrives *Solarinverter *Medicalequipment *Uninterruptiblepowersupply *Air-conditioningsystems *Weldingequipment *Switched-modeand resonant-modepowersupplies
Package: *"E2-Pack"standardoutline *Insulatedcopperbaseplate *SolderingpinsforPCBmounting *Temperaturesenseincluded
IXYS reserves the right to change limits, test conditions and dimensions.
20090804c
(c) 2009 IXYS All rights reserved
1-8
MIXA40WB1200TED
Ouput Inverter T1 - T6 Ratings Symbol VCES VGES VGEM IC25 IC80 Ptot VCE(sat) VGE(th) ICES IGES QG(on) td(on) tr td(off) tf Eon Eoff RBSOA SCSOA tSC ISC RthJC Definitions
collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current
Conditions TVJ = 25C continuous transient TC = 25C TC = 80C TC = 25C IC = 35 A; VGE = 15 V IC = 1.5 mA; VGE = VCE VCE = VCES; VGE = 0 V VGE = 20 V VCE = 600 V; VGE = 15 V; IC = 35 A inductive load VCE = 600 V; IC = 35 A VGE = 15 V; RG = 27 W VGE = 15 V; RG = 27 W; TVJ = 125C TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 25C TVJ = 125C
min.
typ.
max. 1200 20 30 60 40 195
Unit V V V A A W V V V mA mA nA nC ns ns ns ns mJ mJ
total power dissipation collector emitter saturation voltage gate emitter threshold voltage collector emitter leakage current gate emitter leakage current total gate charge turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse bias safe operating area short circuit safe operating area short circuit duration short circuit current thermal resistance junction to case
1.8 2.1 5.5 6.0 0.2
2.1 6.5 2.1 500
106 70 40 250 100 3.8 4.1 105 10 140 0.64
TVJ = 125C VCEK = 1200 V TVJ = 125C
A s A K/W
VCE = 900 V; VGE = 15 V; RG = 27 W;non-repetitive (perIGBT)
Output Inverter D1 - D6 Ratings Symbol VRRM IF25 IF80 VF Qrr IRM trr Erec RthJC Definitions
max. repetitve reverse voltage forward current forward voltage reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy thermal resistance junction to case
Conditions TVJ = 25C TC = 25C TC = 80C IF = 30 A; VGE = 0 V VR = 600 V diF /dt=-600A/s IF = 30 A; VGE = 0 V (perdiode) TVJ = 25C TVJ = 125C TVJ = 125C
min.
typ.
max. 1200 44 29
Unit V A A V V C A ns mJ
1.95 1.85 3.6 29 340 1.05
2.2
1.2
TC=25Cunlessotherwisestated
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20090804c
(c) 2009 IXYS All rights reserved
2-8
MIXA40WB1200TED
Brake T7 Ratings Symbol VCES VGES VGEM IC25 IC80 Ptot VCE(sat) VGE(th) ICES IGES QG(on) td(on) tr td(off) tf Eon Eoff RBSOA SCSOA tSC ISC RthJC Definitions
collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current total power dissipation collector emitter saturation voltage gate emitter threshold voltage collector emitter leakage current gate emitter leakage current total gate charge turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse bias safe operating area short circuit safe operating area short circuit duration short circuit current thermal resistance junction to case
Conditions TVJ = 25C continuous transient TC = 25C TC = 80C TC = 25C IC = 16 A; VGE = 15 V IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V VGE = 20 V VCE = 600 V; VGE = 15 V; IC = 15 A inductive load VCE = 600 V; IC = 15 A VGE = 15 V; RG = 56 W VGE = 15 V; RG = 56 W; TVJ = 125C TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 25C TVJ = 125C
min.
typ.
max. 1200 20 30 28 20 100
Unit V V V A A W V V V mA mA nA nC ns ns ns ns mJ mJ
1.8 2.1 5.5 6.0 0.1
2.1 6.5 0.1 500
48 70 40 250 100 1.6 1.7 45 10 60 1.26
TVJ = 125C VCEK = 1200 V TVJ = 125C
A s A K/W
VCE = 900 V; VGE = 15 V; RG = 56 W;non-repetitive (perIGBT)
Brake Chopper D7 Symbol VRRM IF25 IF80 VF IR Qrr IRM trr Erec RthJC Definitions
max. repetitive reverse voltage forward current forward voltage reverse current reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy thermal resistance junction to case
Conditions TVJ = 25C TC = 25C TC = 80C IF = 10 A; VGE = 0 V VR = VRRM VR = 600 V diF /dt=tbdA/s IF = 10 A; VGE = 0 V (perdiode) TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125C TVJ = 125C
min.
Ratings typ. max. 1200 12 8 2.5 2.6 0.5 tbd tbd tbd tbd 3.4 2.9 0.5
Unit V A A V V mA mA C A ns J K/W
TC=25Cunlessotherwisestated
IXYS reserves the right to change limits, test conditions and dimensions.
20090804c
(c) 2009 IXYS All rights reserved
3-8
MIXA40WB1200TED
Input Rectifier Bridge D11 - D16 Symbol VRRM IFAV IDAVM IFSM I2t Ptot VF IR RthJC Definitions
max. repetitive reverse voltage average forward current max. average DC output current max. forward surge current I2t value for fusing total power dissipation forward voltage reverse current thermal resistance junction to case
Conditions TVJ = 25C sine 180 rect.; d = 1/3 t = 10 ms; sine 50 Hz t = 10 ms; sine 50 Hz TC = 80C TC = 80C TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125C TC = 25C IF = 50 A VR = VRRM (perdiode) TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125C
min.
Ratings typ. max. 1600 37 105 320 280 510 390 114 1.34 1.34 0.2 1.1 1.7 0.02
Unit V A A A A A2s A2s W V V mA mA K/W
Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ TVJM Tstg VISOL CTI Md dS dA Rpin-chip RthCH Weight Equivalent Circuits for Simulation
I V0 R0
Definitions
resistance
Conditions TC = 25C
min. 4.75
Ratings typ. max. 5.0 5.25 3375 Ratings typ. max. 125 150 125 2500 -
Unit kW K
Definitions
operating temperature max. virtual junction temperature storage temperature isolation voltage comparative tracking index mounting torque (M5) creep distance on surface strike distance through air resistance pin to chip thermal resistance case to heatsink
Conditions
min. -40 -40
Unit C C C V~ Nm mm mm
IISOL < 1 mA; 50/60 Hz 3 6 6 5 withheatsinkcompound 0.02 180
6
mW K/W g
Symbol V0 R0 V0 R0 V0 R0 V0 R0 V0 R0
Definitions
rectifier diode IGBT free wheeling diode IGBT free wheeling diode
Conditions D8 - D13 T1 - T6 D1 - D6 T7 D7
min. TVJ = 150C TVJ = 150C TVJ = 150C TVJ = 150C TVJ = 150C
Ratings typ. max. 0.88 9 1.1 40 1.2 27 1.1 86 1.15 170
Unit V mW V mW V mW V mW V mW
TC=25Cunlessotherwisestated IXYS reserves the right to change limits, test conditions and dimensions.
20090804c
(c) 2009 IXYS All rights reserved
4-8
MIXA40WB1200TED
Circuit Diagram
21 D11 D13 D15 7 1 2 3 22
D7 T1 D1
18 17 6
T3
D3
20 19 5
T5
D5
NTC 8 4
16 15
D12
D14
D16
14
T7
11 10
T2
D2
12
T4
D4
13
D6 T6
9
23
24
Outline Drawing
Dimensions in mm (1 mm = 0.0394")
Product Marking
Part number
M = Module I = IGBT X = XPT A = Standard 40 = Current Rating [A] WB =6-Pack+3~RectifierBridge&BrakeUnit 1200 = Reverse Voltage [V] T =NTC ED =E2-Pack
Ordering Standard
Part Name MIXA40WB1200TED
Marking on Product MIXA40WB1200TED
Delivering Mode Base Qty Ordering Code Box 6 507497
20090804c
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2009 IXYS All rights reserved
5-8
MIXA40WB1200TED
Inverter T1 - T6
70 60 50
IC 40 [A] 30
VGE = 15 V
70 60 50
TVJ = 25C TVJ = 125C
VGE = 15 V 17 V 19 V
13 V 11 V
IC 40 [A] 30
TVJ = 125C
9V
20 10 0 0 1 2 3
20 10 0 0 1 2 3 4 5
VCE [V]
VCE [V]
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics 20 IC = 35 A VCE = 600 V
70 60 50
IC 40 [A] 30 VGE [V]
15
10
20 10 0 5
TVJ = 125C TVJ = 25C
5
6
7
8
9
VGE [V]
10
11
12
13
0
0
20
40
60
80
100 120 140
QG [nC] Fig. 4 Typ. turn-on gate charge Eon
Fig. 3 Typ. tranfer characteristics
10 8 6 4 2 0
RG = 27 VCE = 600 V VGE = 15 V TVJ = 125C
6
IC = 35 A VCE = 600 V VGE = 15 V TVJ = 125C
Eon
E [mJ]
Eoff
5
E [mJ] Eoff
4
0
20
40
60
80
IC [A] Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
3 20
40
60
80
RG [ ] Fig. 6 Typ. switching energy vs. gate resistance
20090804c
(c) 2009 IXYS All rights reserved
6-8
MIXA40WB1200TED
60 50 40
IC [A]
10
1
ZthJC [K/W]
Diode
IGBT
30 20 10 0
TVJ = 125C TVJ = 25C
0.1
0
1
VF [V]
2
3
0.01 0.001
0.01
tp [s]
0.1
1
10
Typ. forward characteristic per diode
Typ. transient thermal impedance IGBT Ri 1 2 3 4 0.152 0.072 0.308 0.108 FRD
ti
0.0025 0.03 0.03 0.08
Ri 0.341 0.217 0.348 0.294
ti
0.0025 0.03 0.03 0.08
IXYS reserves the right to change limits, test conditions and dimensions.
20090804c
(c) 2009 IXYS All rights reserved
7-8
MIXA40WB1200TED
Brake T7 & D7
20 18 16 14 12 Vge = 15V 25C 125C
20 25C 18 16 14 12 125C
Ic [A]
If [A]
0.0 0.5 1.0 1.5 Vce [V] 2.0 2.5 3.0 3.5
10 8 6 4 2 0
10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 Vf [V] 2.5 3.0 3.5 4.0
Typ.outputcharacteristics
Typ.forwardcharacteristics
NTC
10 Zth(j-c) - igbt Zth(j-c) - frd
100000
10000
Zth(j-c) [K/W]
1
R [W]
1000 100
0.01 0.1 tp [s] 1 10
0.1 0.001
0
25
50
75 Tc [C]
100
125
150
Typ.transientthermalimpedance
Typ.NTCresistanceversustemperature
IXYS reserves the right to change limits, test conditions and dimensions.
20090804c
(c) 2009 IXYS All rights reserved
8-8

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